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PD - 9.1131A
IRGBC20M-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Short Circuit Rated Fast IGBT
VCES = 600V VCE(sat) 2.3V
@VGE = 15V, I C = 8.0A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
SMD-220
Max.
600 13 8.0 26 26 10 20 5.0 60 24 -55 to +150
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Units
V A
s V mJ W
C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Thermal Resistance
Parameter
RJC RJA RJA Wt Junction-to-Case Junction-to-Ambient, (PCB mount)** Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- --
Typ.
-- -- -- 2 (0.07)
Max.
2.1 40 80 --
Units
C/W g (oz)
** When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 1
C-335
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IRGBC20M-S
Electrical Characteristics @ T
V(BR)CES V(BR)ECS
V(BR)CES/TJ
J
= 25C (unless otherwise specified)
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.42 -- V/C VGE = 0V, I C = 1.0mA -- 2.0 2.3 IC = 8.0A V GE = 15V -- 2.7 -- V IC = 13A See Fig. 2, 5 -- 2.5 -- IC = 8.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.7 3.8 -- S VCE = 100V, I C = 8.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Switching Characteristics @ T
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a )
J
= 25C (unless otherwise specified)
Min. Typ. Max. Units Conditions -- 7.9 16 IC = 8.0A -- 3.6 5.2 nC VCC = 400V See Fig. 8 -- 6.0 9.0 VGE = 15V -- 29 -- TJ = 25C -- 22 -- ns IC = 8.0A, V CC = 480V -- 270 400 VGE = 15V, R G = 50 -- 280 510 Energy losses include "tail" -- 0.14 -- -- 0.86 -- mJ See Fig. 9, 10, 11, 14 -- 1.0 2.0 10 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 50, VCPK < 500V -- 27 -- TJ = 150C, -- 21 -- ns IC = 8.0A, V CC = 480V -- 370 -- VGE = 15V, R G = 50 -- 420 -- Energy losses include "tail" -- 1.4 -- mJ See Fig. 10, 14 -- 7.5 -- nH Measured 5mm from package -- 365 -- VGE = 0V -- 47 -- pF VCC = 30V See Fig. 7 -- 4.8 -- = 1.0MHz
Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%.
Pulse width 5.0s, single shot.
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IRGBC20M-S
20
F o r b o th :
Triangular wave:
16
Loa d C urre nt (A )
D u ty c ycle : 5 0 % TJ = 1 2 5 C T s ink = 9 0 C G a te d rive a s sp ec ified Pow er D issipation = 1 4W
C lamp voltage: 80% of rated
12
S quare w ave: 60% of rated voltage
8
4
Ide al d iod es
0 0.1 1 10 100
A
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
T = 25C J TJ = 150C
10
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
TJ = 150C
10
TJ = 25C
1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGBC20M-S
14
12
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
5.0
VGE = 15V 80s PULSE WIDTH I C = 16A
4.0
10
8
3.0
6
2.0
I C = 8.0A IC = 4.0A
4
1.0
2
0 25 50 75 100 125
A
150
0.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T herm al Response (Z thJ C )
1
D = 0.50
0 .2 0 0 .10 0.0 5
PD M
0.1
0.0 2 0 .01
t
SIN G LE P U LS E (TH ER M AL R E SP O N SE )
N o te s : 1 . D u ty fa c to r D = t 1 /t 2
1 t2
0.01 0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC20M-S
600
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
VCE = 400V I C = 8.0A
16
C, Capacitance (pF)
Cies
400
12
Coes
8
200
4
Cres
0 1 10
A
100
0 0 4 8 12 16
A
20
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0 .9 0 0
0 .8 9 6
T o tal S w itc hing Los se s (m J)
Total Sw itching Losses (m J)
VCC VG E TC IC
= 48 0 V = 15 V = 25 C = 8.0A
10
R G = 50 V G E = 15 V V C C = 4 80 V I C = 16 A
0 .8 9 2
I C = 8.0A
1
0 .8 8 8
I C = 4.0A
0 .8 8 4
0 .8 8 0 10 20 30 40 50 60
0.1 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
R G , G ate R esistance ( )
W
TC , C ase Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
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IRGBC20M-S
4.0
3.0
IC , Collector-to-Emitter Current (A)
Total S w itching Losses (m J)
RG TC V CC VGE
= 50 = 150 C = 4 80 V = 15 V
100
VGE = 20V TJ = 125C
SAFE OPERATING AREA
10
2.0
1.0
0.0 0 4 8 12 16
A
20
1 1 10 100
A
1000
I C , C o llector-to -E m itte r Current (A )
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD-220 Section D - page D-12
C-340
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